半导体学报2009，Vol.30Issue(3)：1-8,8.DOI:10.1088/1674-4926/30/3/031001
The Bipolar Field-Effect Transistor:Ⅶ. The Unipolar Current Mode for Analog-RF Operation(Two-MOS-Gates on Pure-Base
The Bipolar Field-Effect Transistor:Ⅶ. The Unipolar Current Mode for Analog-RF Operation(Two-MOS-Gates on Pure-Base
摘要
Abstract
This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor (BiFET) under the unipolar (electron) current mode of operation, with bipolar (elec-tron and hole) charge distributions considered. The model BiFET example presented has two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both edges of the thin base. The hole contacts on both edges of the thin pure base layer are grounded to give zero hole current. This 1-transistor analog-RF Basic Building Block nMOS amplifier circuit, operated in the unipolar current mode, complements the 1-transistor digital Basic Build Block CMOS voltage inverter circuit, operated in the bipolar-current mode just presented by us.关键词
bipolar field-effect transistor theory/electron and hole contacts/electron emitter and collector/nMOS-BiFETKey words
bipolar field-effect transistor theory/electron and hole contacts/electron emitter and collector/nMOS-BiFET分类
信息技术与安全科学引用本文复制引用
Jie Binbin,Sah Chih-Tang..The Bipolar Field-Effect Transistor:Ⅶ. The Unipolar Current Mode for Analog-RF Operation(Two-MOS-Gates on Pure-Base[J].半导体学报,2009,30(3):1-8,8.基金项目
This investigation and Jie Binbin have been supported by the CTSAH Associates (CTSA), founded by the late Linda Su-Nan Chang Sah,in memory of her 70th year. （CTSA）
