光学精密工程2007，Vol.15Issue(12)：1838-1843,6.
用X射线反射测量法表征双层结构中低原子序数材料的特性
Characterization of low-Z material layer profiles in bilayer structures by X-ray reflectivity measurement
摘要
Abstract
A convenient method,low-angle X-ray reflectivity measurement method,is presented to characterize the parameters of low-Z material layers in bilayer structures using X-ray diffractometer (XRD).Because the low-Z material optical constant is similar to the silicon(Si)substrate,the change of the low-Z material layer profiles is difficult to determine.Therefore,an ultra-thin metal layer is deposited as the Base Layer(BL)onto the substrate prior to the low-Z material layer.By choosing chromium(Cr)as the BL material,three Cr/C bilayer films with different C deposition times are fabricated and measured.After the simulation of the reflectivity curves,the density of C is approximately 2.25 g/cm3,while the deposition rate of C layer is 0.058 nm/s under our laboratory conditions.关键词
X射线衍射仪/低原子序数材料/反射率测试/薄膜Key words
XRD/low-Z material/reflectivity measurement / thin films分类
数理科学引用本文复制引用
徐壵,王占山,徐敬,张众,王洪昌,朱京涛,王风丽,王蓓,秦树基,陈玲燕..用X射线反射测量法表征双层结构中低原子序数材料的特性[J].光学精密工程,2007,15(12):1838-1843,6.基金项目
Supported by the National Natural Science Foundation of China(No.60378021 and 10435050) （No.60378021 and 10435050）
and the Program for New Century Excellent Talents in University(No.NCET-04-0376). （No.NCET-04-0376）
