半导体学报2005，Vol.26Issue(9)：1860-1864,5.
1.3μm GaAs基GaInNAs量子阱生长与激光器研制
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes
摘要
Abstract
Material growth and device fabrication of the first 1.3μm quantum well (QW) edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GaInNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.关键词
GaAs基材料/GaInNAs量子阱/分子束外延/激光器Key words
GaAs based materials/GaInNAs quantum wells/molecular beam epitaxy/laser diodes分类
信息技术与安全科学引用本文复制引用
牛智川,韩勤,倪海桥,杨晓红,徐应强,杜云,张石勇,彭红玲,赵欢,吴东海,李树英,贺振宏,任正伟,吴荣汉..1.3μm GaAs基GaInNAs量子阱生长与激光器研制[J].半导体学报,2005,26(9):1860-1864,5.基金项目
国家自然科学基金(批准号:90201026,60137020),国家高技术研究发展计划及国家重点基础研究专项资助项目 （批准号:90201026,60137020）
Project supported by the National Natural Science Foundation of China(Nos. 90201026,60137020), the National High Technology Research and Development Program of China, and the Special Funds for Major State Basic Research Project （Nos. 90201026,60137020）
