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溅射参数对Ge2Sb2Te5薄膜光学常数的影响

谢泉 侯立松 阮昊 干福熹 李晶

半导体学报2001,Vol.11Issue(2):187-192,6.
半导体学报2001,Vol.11Issue(2):187-192,6.

溅射参数对Ge2Sb2Te5薄膜光学常数的影响

Effects of Sputtering Parameter on Optical Constants of Ge2Sb2Te5 Thin Films

谢泉 1侯立松 2阮昊 2干福熹 2李晶2

作者信息

  • 1. 中国科学院上海光学精密机械研究所,上海 201800 长沙交通学院信息与计算科学系,长沙 410076
  • 2. 中国科学院上海光学精密机械研究所,上海 201800
  • 折叠

摘要

Abstract

The effects of sputtering parameter on the optical constants(n,k)of Ge2Sb2Te5 thin films in the wavelength range of 300—830nm were studied.The results show:(1)When the sputtering power is constant,the refractive index(n) first increases and then decreases with the increasing of Ar gas pressure,whereas the extinction coefficient(k) changes with Ar gas pressure in a contrary way to that of n.(2)When the sputtering Ar gas pressure is constant,for the amorphous thin films,in the wavelength range of 300—500nm,the refractive index first increases and then decreases with the increasing power,whereas the extinction coefficient decreases monotonically.In the wavelength range of 500—830nm,the refractive index decreases with the sputtering power,while the extinction coefficient first decreases and then increases.For the crystalline thin films,in the wavelength range of 300—830nm,the refractive index first decreases and then increases,whereas the extinction coefficient decreases.(3)The extent of the influence of sputtering parameter on n and k also changes with the wavelength,which is greater in the long wavelength region than that in the short wavelength region.The mechanism by which the optical constants of the Ge2Sb2Te5 thin films are affected by sputtering parameter has been discussed based on the variation of the density and microstructure of the films.

关键词

光学常数/Ge2Sb2Te5薄膜/溅射参数

分类

信息技术与安全科学

引用本文复制引用

谢泉,侯立松,阮昊,干福熹,李晶..溅射参数对Ge2Sb2Te5薄膜光学常数的影响[J].半导体学报,2001,11(2):187-192,6.

基金项目

国家自然科学基金重大资助项目,批准号:59832060. ()

半导体学报

OA北大核心CSCD

1674-4926

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