半导体学报2005，Vol.26Issue(10)：1875-1880,6.
采用半背沟注入提高部分耗尽SOI nMOSFETs的漏源击穿电压
Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation
吴峻峰 1钟兴华 1李多力 1毕津顺 1海潮和1
作者信息
- 1. 中国科学院微电子研究所,北京,100029
- 折叠
摘要
Abstract
FB (floating-body) and BC (body-contact) partially depleted SOI nMOSFETs with HBC(half-back-channel) implantation are fabricated.Test results show that such devices have good performance in delaying the occurrence of the "kink" phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOSFETs,while not decreasing the threshold voltage of the back gate obviously.Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the "kink"effect.A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the"kink" effect.关键词
部分耗尽SOI/半背沟道/击穿/翘曲效应Key words
PDSOI/HBC/breakdown/kink effect分类
信息技术与安全科学引用本文复制引用
吴峻峰,钟兴华,李多力,毕津顺,海潮和..采用半背沟注入提高部分耗尽SOI nMOSFETs的漏源击穿电压[J].半导体学报,2005,26(10):1875-1880,6.
