电化学2001，Vol.7Issue(2)：189-194,6.
钨的化学机械抛光过程中TiN-W电偶的腐蚀行为
Galvanic Corrosion of TiN-W Electro-couple During Tungsten Chemical Mechanical Polishing
程璇 1林昌健2
作者信息
- 1. 厦门大学化学系,
- 2. 厦门大学材料科学与工程系,
- 折叠
摘要
Abstract
Chemical-mechanical polishing (CMP) is a process whereby mechanical and chemical forces are combined to remove material from a wafer and polish it to a flat surface. Tungsten CMP is an important process to gain the global planarity of silicon wafers with tungsten (W) plugs. Tungsten is actually deposited on a thin adhesive layer of titanium nitride (TiN) on silicon. When close to the final stage of polishing, TiN and W will be simultaneously exposed to the polishing chemistry, forming a galvanic couple. The corrosion of TiN and W couple will result in different polish rate.
This work studied the potential difference and galvanic currents on particulate contamination of the abrasive on the patterned surface and on corrosion behaviors of TiN and W. The polarization curves of TiN and W were, respectively, obtained in 0.01 mol/L KNO3 solutions in the absence and presence of three typical oxidants (H2O2, KIO3, Fe(NO3)3) by DC polarization technique. The corrosion potentials and galvanic currents were measured when TiN and W were placed in a specially designed electrochemical cell to form electro-couple. The preliminary results revealed that the corrosion rate of TiN-W electro-couple significantly increased in the presence of 4.5% H2O2 at pH 4.0, while reduced to the minimal in the presence of Fe(NO3)3 at pH 1.5. Agitation significantly enhanced the corrosion rate of TiN-W couple.关键词
化学机械抛光/电化腐蚀/球面平整度分类
矿业与冶金引用本文复制引用
程璇,林昌健..钨的化学机械抛光过程中TiN-W电偶的腐蚀行为[J].电化学,2001,7(2):189-194,6.
