半导体学报2008，Vol.29Issue(10)：1913-1916,4.
半绝缘GaAs光电导开关中光激发电荷畴的猝灭畴模式
Quenched-Domain Mode of Photo-Activated Charge Domain in Semi-Insulating GaAs Devices
摘要
Abstract
The quenched domain mode of the photo-activated charge domain (PACD) in semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSSs) is observed. We find that the quenched domain is induced by the instantaneous electric field across the PCSS being lower than the sustaining electric field of the domain during the transit of the domain. The extinction of the domain before reaching the anode can lead to a current oscillation frequency larger than the transittime frequency when the bias electric field is lower than the threshold electric field of the nonlinear PCSS. According to the operation circuit and the physical properties of a high-field domain,an equivalent circuit of the quenched domain is presented. The equivalent circuit parameters including capacitance, resonant frequency, and inductance are calculated and measured. Our calculations agree well with the experimental results. This research provides theoretical and experimental criteria for heightening the oscillation frequency and efficiency of PACD devices.关键词
光电导开关/猝灭畴模式/等效电路Key words
photoconducting switch/quenched domain mode/equivalent-circuit分类
信息技术与安全科学引用本文复制引用
田立强,施卫..半绝缘GaAs光电导开关中光激发电荷畴的猝灭畴模式[J].半导体学报,2008,29(10):1913-1916,4.基金项目
Project supported by the National Natural Science Foundation of China (No. 50477011) and the Research Fund for Outstanding Doctors of Xi'an U-niversity of Technology (No. 207-210006)国家自然科学基金(批准号:50477011)和西安理工大学优秀博士研究基金(批准号:207-210006)资助项目 （No. 50477011）
