光学精密工程2007，Vol.15Issue(12)：1926-1931,6.
SU-8紫外深度光刻的误差及修正
Correction of pattern transfer errors for SU-8 UV deep lithography
摘要
Abstract
The diffraction and absorption of UV light in SU-8 resist makes it very difficult to fabricate high precision microstructures with high aspect ratio in the process of UV LIGA,because the absorption coefficient gets bigger and the penetration depth gets shorter rapidly as the wavelength gets shorter.Therefore,such factors having effect on the precision of deep UV lithography as diffraction effect,exposure dosage,wavelength and distribution of fly's eyes lens etc.,are investigated in this paper.A method of correcting pattern transfer errors is developed through investigation of pattern transfer errors.Proposed method adopts the feature classification and area evaluation to modify the mask contour,thereby making the lithography contour as close as possible to the desired contour.In addition,it can be used to reduce the complexity and enhance the correction efficiency.关键词
SU-8光刻胶/紫外深度光刻/掩模/图形转移/误差修正Key words
SU-8 photoresist/UV deep lithography/mask/pattern transfer/error correction分类
信息技术与安全科学引用本文复制引用
郑津津,陈有梅,周洪军,田杨超,刘刚,李晓光,沈连婠..SU-8紫外深度光刻的误差及修正[J].光学精密工程,2007,15(12):1926-1931,6.基金项目
Supported by NSF of China(No.60473133 （）
No.10575097),the"Hundred Talented"Projects from ACS,the 973 Proiect(No.2006CB303102),the SRFDP(No.20060358050),and the 111 Projects. （No.2006CB303102）
