半导体学报2006，Vol.27Issue(z1)：20-24,5.
InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响
Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs
摘要
Abstract
Photoluminescence,HR-XRD,and Raman scattering spectra of InGaN/GaN MQWs and InGaN/AlGaN on sapphire and membranes with no substrate fabricated by laser lift-off are studied. In contrast to the emission peak from the membrane samples of InGaN/GaN MQWs, which blue-shifts after annealing at 700℃, a red-shift of the PL peak position in the InGaN/AlGaN MQW membrane sample is observed,showing different strain effects in these MQWs. In Raman scattering spectra,the InGaN/GaN MQW film without sapphire substrate has a lower E2mode frequency (567. 5cm-1) than that of the films with substrate (569. 1cm-1),which indicates that the compressive stress in the films is released partially when the sapphire substrate is taken off.关键词
光致发光谱/InGaN/AlGaN/多量子阱/应变Key words
photoluminescence/InGaN/AlGaN/MQWs/strain分类
信息技术与安全科学引用本文复制引用
于彤军,康香宁,秦志新,陈志忠,杨志坚,胡晓东,张国义..InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响[J].半导体学报,2006,27(z1):20-24,5.基金项目
国家自然科学基金(批准号:60676032,60276010,60376025,60276034)和北京市科技计划(批准号:H030430020230)资助项目 Project supported by the National Natural Science Foundation of China(Nos. 60676032,60276010,60376025,60276034) and the Beijing Scientific & Technical Program(No.H030130020230) （批准号:60676032,60276010,60376025,60276034）
