半导体学报2006，Vol.27Issue(2)：204-217,14.
Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction
Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction
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作者信息
- 1. Department of Theoretical Physics, Research School of Physical Sciences and Engineering,Australian National University, Canberra ACT 0200, Australia;Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
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摘要
Abstract
A systematic theoretical approach is developed to study the electronic and transport properties of a twodimensional electron gas (2DEG) in the presence of spin-orbit interactions induced by the Rashba effect. The standard random-phase approximation is employed to calculate the screening length caused by electron-electron interaction in different transition channels. The quantum and transport mobilities in different spin branches are evaluated using the momentum-balance equation derived from the Boltzmann equation,in which the electron interactions with both the remote and background impurities are taken into account in an InAlAs/InGaAs heterojunction at low-temperatures.关键词
InGaAs/InAlAs HEMT/2D modeling and simulation/polarization charges/quantum effectsKey words
InGaAs/InAlAs HEMT/2D modeling and simulation/polarization charges/quantum effects分类
数理科学引用本文复制引用
..Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction[J].半导体学报,2006,27(2):204-217,14.
