半导体学报2005，Vol.26Issue(11)：2049-2052,4.
fmax为100GHz的蓝宝石衬底AlGaN/GaN高电子迁移率晶体管
AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz
摘要
Abstract
AlGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0. 3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0. 85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm. The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz, respectively. The output power density and gain are 1. 8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.关键词
AlGaN/GaN/HEMT/蓝宝石Key words
AlGaN/GaN/HEMT/sapphire分类
信息技术与安全科学引用本文复制引用
李献杰,曾庆明,周州,刘玉贵,乔树允,蔡道民,赵永林,蔡树军..fmax为100GHz的蓝宝石衬底AlGaN/GaN高电子迁移率晶体管[J].半导体学报,2005,26(11):2049-2052,4.基金项目
国家重点基础研究发展规划(批准号:51327030201)和国家自然科学基金(批准号:60136020)资助项目Project supported by the State Key Development Program for Basic Research of China(No. 51327030201) and the National Natural Science Foundation of China(No. 60136020) （批准号:51327030201）
