半导体学报2008，Vol.29Issue(2)：206-209,4.
钒掺杂形成半绝缘6H-SiC的补偿机理
A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium
摘要
Abstract
A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the inten-tional doping of vanadium. Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ionmass spectroscopy (SIMS) measurements,semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep aceeptor level. The presence of different vanadium charge states V3+ and V4+ is detected by electron paramagnetie resonance and optical absorption measurements,which coincides with the results obtained by SIMS measurements. Both optical absorption and low temperature photoluminescenee measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.关键词
6H-SiC/半绝缘/钒掺杂/补偿/钒受主能级Key words
6H-SiC/semi-insulating/vanadium doping/compensation/vanadium acceptor level分类
信息技术与安全科学引用本文复制引用
王超,张义门,张玉明,王悦湖,徐大庆..钒掺杂形成半绝缘6H-SiC的补偿机理[J].半导体学报,2008,29(2):206-209,4.基金项目
Project supported by the National Natural Science Foundation of. China (No. 60376001) ,the Key Research Foundation of the Ministry of Education(No.106150),and the Xi'an Applied Materials Foundation (No. XA-AM-200607) （No. 60376001）
