半导体学报2006，Vol.27Issue(12)：2080-2084,5.
一种极低噪声高增益微波单片低噪声放大器
A Super-Low-Noise,High-Gain MMIC LNA
摘要
Abstract
A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology.The on-chip matched amplifier employs lumped elements to reduce the circuit size,and shows a 50Ω noise figure less than 0.9dB,gain greater than 26dB,and return loss less than -10dB in the S-C band range of 3.5 to 4.3GHz.The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range.It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain.关键词
低噪声放大器/增强型赝配高电子迁移率晶体管/微波单片集成电路Key words
low noise amplifier/enhancement PHEMT/MMIC分类
信息技术与安全科学引用本文复制引用
黄华,张海英,杨浩,尹军舰,朱旻,叶甜春..一种极低噪声高增益微波单片低噪声放大器[J].半导体学报,2006,27(12):2080-2084,5.基金项目
Project supported by the National Natural Science Foundation of China(No.60276021) and the State Key Development Program for Basic Research of China (No.G2002CB311901)国家自然科学基金(批准号:60276021)和国家重点基础研究发展规划(批准号:G2002CB311901)资助项目 （No.60276021）
