发光学报2001,Vol.22Issue(3):209-212,4.
高N2气流下在GaAs(001)上用MBE法生长InN
Preparation of ZnO Thin Films by Electron Beam Evaporation …… ZHANG Bin, LIN Bi-xia, FU Zhu-xi, et al. (309)Growth of InN on GaAs(001) under High N2 Flux by MBE
摘要
关键词
RHEED/X-射线倒易空间图形/h-InN分类
信息技术与安全科学引用本文复制引用
秦志新,陈志忠,张国义..高N2气流下在GaAs(001)上用MBE法生长InN[J].发光学报,2001,22(3):209-212,4.