半导体学报2008，Vol.29Issue(11)：2101-2105,5.
基于IBM SiGe BiCMOS工艺5PAe的2GHz功率放大器设计
A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe
宋家友 1王志功 2彭艳军1
作者信息
- 1. 东南大学射频与光电集成电路研究所,南京,210096
- 2. 郑州大学信息工程学院,郑州,450052
- 折叠
摘要
Abstract
A 2GHz power amplifier realized in IBM 5PAe 0.35μm SiGe BiCMOS technology is reported.This amplifier was implemented in a two-stage single-ended structure.All components except choking inductors were integrated on-chip.Full-frequency stability was achieved using serial resistors between the bases of the transistors and matching inductors.The off-chip test proved the stability under all the supplied voltages.At VC=3.5V,VB=6V,the small signal gain Was 20.8dB.the input and output reflectance was less than-17 and-16dB,respectively,and the Pout-2dB was about 24dBm.At the output power of 25.1dBm,the PAE was about 21.5%,and the second and third harmonics were less than-45 and-52dBc,respectively.This insures the linearity of the circuits.关键词
功率放大器/SiGe/BiCMOS/HBTKey words
power amplifier/silicon germanium/BiCMOS/heterojunction bipolar transistor分类
信息技术与安全科学引用本文复制引用
宋家友,王志功,彭艳军..基于IBM SiGe BiCMOS工艺5PAe的2GHz功率放大器设计[J].半导体学报,2008,29(11):2101-2105,5.
