半导体学报2008，Vol.29Issue(11)：2110-2114,5.
PDP驱动芯片中高压LDMOS建模
Modeling of High-Voltage LDMOS for PDP Driver ICs
摘要
Abstract
A SPICE sub-circuit model is developed for high-voltage LDMOS transistors integrated in PDP driver ICs.The model accounts for intrinsic LDMOS phenomena such as the quasi-saturation effects,voltage-dependent drift resistance,seIf-heating effects,and Miller capacitance.In contrast to most physical or sub-circuit models,the proposed model not only Provides precise simulated results,but also brings a very fast modeling procedure.Furthermore,the model also can be embedded in a commercial SPICE simulator easily.The simulation results using the presented models agree well with the measured ones and the error is less than 5%.关键词
模型/LDMOS子电路/PDP驱动芯片Key words
model/LDMOS/sub-circuit/PDP driver ICs分类
信息技术与安全科学引用本文复制引用
李海松,孙伟锋,易扬波,时龙兴..PDP驱动芯片中高压LDMOS建模[J].半导体学报,2008,29(11):2110-2114,5.基金项目
国家高技术研究发展计划资助项目(批准号:2004AA1Z1060) （批准号:2004AA1Z1060）
Project supported by the National High Technology Research and Development Program of China(No.2004AA1Z1060) （No.2004AA1Z1060）
