半导体学报2008，Vol.29Issue(11)：2130-2135,6.
p型微晶硅薄膜的沉积及其在微晶硅薄膜太阳电池中的应用
Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells
摘要
Abstract
Highly conductive boron-doped hydrogenated microcrystalline silicon(μc-Si:H)films and solar cells are prepared by plasma enhanced chemical vapour deposition(PECVD).The effects of diborane concentration,thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layrers are investigated.With the optimum p-layer deposition parameters,a higher efficiency of 5.5%is obtained with 0.78nm/s deposited i-layers.In addition,the carriers transport mechanism of p-type μc-Si:H films is discussed.关键词
B掺杂微晶硅薄膜/喇曼晶化率/暗电导/太阳电池Key words
boron-doped μc-Si:H films/Raman crystaUinity/dark conductivity/solar cells分类
信息技术与安全科学引用本文复制引用
陈永生,杨仕娥,汪建华,卢景霄,郜小勇,谷锦华,郑文,赵尚丽..p型微晶硅薄膜的沉积及其在微晶硅薄膜太阳电池中的应用[J].半导体学报,2008,29(11):2130-2135,6.基金项目
国家重点基础研究发展规划(批准号:2006CB202601)及河南省基础研究计划(批准号:072300410140)资助项目 （批准号:2006CB202601）
Project supported by the State Key Development Program for Basic Research of China(No.2006CB202601)and the Basic Research Project of Henan Province(No.072300410) （No.2006CB202601）
