半导体学报2008，Vol.29Issue(2)：214-218,5.
高压pLEDMOS器件在不同应力条件下导通电阻的衰退及改进方法
On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method
摘要
Abstract
The on-resistance degradations of the p-type lateral extended drain MOS transistor (pLEDMOS) with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This differ-ence results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented,which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simu-lator.关键词
p型横向延伸漏金属氧化物半导体管/导通电阻衰退/热电子注入和俘获/厚栅氧Key words
pLEDMOS/on-resistance degradation/hot electron injection and trapping/thick gate oxide分类
信息技术与安全科学引用本文复制引用
孙伟锋,吴虹,时龙兴,易扬波,李海松..高压pLEDMOS器件在不同应力条件下导通电阻的衰退及改进方法[J].半导体学报,2008,29(2):214-218,5.基金项目
Project supported by the National High Technology Research and Development Program of China (No. 2004AA1Z1060) （No. 2004AA1Z1060）
