半导体学报2008，Vol.29Issue(11)：2143-2147,5.
基于等离子体氮化工艺的超薄栅氧化膜的电学特性和可靠性
Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (＜2nm) with Plasma Nitridation
孙凌 1刘薇 2段振永 3许忠义 2杨华岳2
作者信息
- 1. 中国科学院上海微系统与信息技术研究所,上海,200050
- 2. 上海宏力半导体制造有限公司,上海,201203
- 3. 中国科学院研究生院,北京,100049
- 折叠
摘要
Abstract
MMT (modified magnetron typed) plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs (metal-oxide-semiconductor field effect transistors). Dual-peak and single-peak N distributions are formed after nitridation. The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility, and TDDB characteristics. The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated (ULSI) technology.关键词
等离子体氮化/迁移率/时变击穿Key words
plasma nitridation/mobility/TDDB分类
信息技术与安全科学引用本文复制引用
孙凌,刘薇,段振永,许忠义,杨华岳..基于等离子体氮化工艺的超薄栅氧化膜的电学特性和可靠性[J].半导体学报,2008,29(11):2143-2147,5.
