半导体学报2000，Vol.21Issue(3)：215-218,4.
Fabrication of Enhancement Mode GaN Metal-Insulator-Semiconductor Field Effect Transistor
Fabrication of Enhancement Mode GaN Metal-Insulator-Semiconductor Field Effect Transistor
摘要
Abstract
The enhancement mode GaN metal-insulator-semiconductor field effect transistor (E-MISFET) is successfully fabricated on a GaN/A1GaN/GaN double heterojunction structure with SiO2 as the insulator layer. The enhancement mode DC characteristics have been first achieved in the device with the gate-length of 6μm,10μm and gate-width of 100μm. The device with gate-length of 6μm shows the DC transconductance of 0.6 mS/mm and the maximum drain-source current of 0.5mA. The gate leakage current is lower than 10-6A at the bias of -10V while the gate breakdown voltage is higher than 20V. This result proves the presence of a piezoelectric field in the heterojunction,the strongly asymmetric band bending and the carriers distribution caused by the piezoelectric field.关键词
GaN/MISFET/PiezoelectricKey words
GaN/MISFET/Piezoelectric引用本文复制引用
陈鹏,张荣,周玉刚,罗志云,谢世勇,陈志忠,李卫平,郑有料..Fabrication of Enhancement Mode GaN Metal-Insulator-Semiconductor Field Effect Transistor[J].半导体学报,2000,21(3):215-218,4.基金项目
Supported by High Technology Research & Development Program of China (Contract No. 863-715-011-0030)and Fundamental Research of China and MOTOROLA(China Inc. ) Semiconductor Scholarship. （Contract No. 863-715-011-0030）
