半导体学报2008，Vol.29Issue(11)：2153-2157,5.
具有n埋层pSOI三明治结构的射频功率LDMOS的输出特性
Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS
李泽宏 1吴丽娟 1张波 1李肇基1
作者信息
- 1. 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054
- 折叠
摘要
Abstract
A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed.The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance. The output characteristics become better as the drain-substrate parasitic capacitance decreases. Results show that the drain-substrate capacitance of the nburied-pSOI sandwiched LDMOS is 46. 6% less than that of the normal LDMOS,and 11.5% less than that of the n-buriedpSOI LDMOS,respoctively. At 1dB compression point,its output power is 188% higher than that of the normal LDMOS,and 10.6% higher than that of the n-buried-pSOI LDMOS, respectively. The power-added efficiency of the proposed structure is 38. 3%. The breakdown voltage of the proposed structure is 11% more than that of the normal LDMOS.关键词
n埋层pSOI/三明治/寄生电容/输出特性/射频功率LDMOSKey words
n-buried-pSOI/sandwiched/parasitic capacitance/output characteristics/RF power LDMOS分类
信息技术与安全科学引用本文复制引用
李泽宏,吴丽娟,张波,李肇基..具有n埋层pSOI三明治结构的射频功率LDMOS的输出特性[J].半导体学报,2008,29(11):2153-2157,5.
