东南大学学报（英文版）2003，Vol.19Issue(3)：221-224,4.
一种0.6μm CMOS带隙参考电压源
A 0.6 μm CMOS bandgap voltage reference circuit
摘要
Abstract
On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.关键词
CMOS/相互补偿/迁移率和阈值电压温度效应Key words
CMOS/mutual compensation/mobility and threshold voltage temperature effects分类
信息技术与安全科学引用本文复制引用
梁帮立,王志功,田俊,冯军,夏春晓,胡艳,张丽,熊明珍..一种0.6μm CMOS带隙参考电压源[J].东南大学学报（英文版）,2003,19(3):221-224,4.基金项目
The National Natural Science Foundation of China (69825101). （69825101）
