半导体学报2008，Vol.29Issue(11)：2226-2231,6.
射频薄膜体声波谐振器的研制和分析
Development and Analysis of an RF Film Bulk Acoustic Resonator
摘要
Abstract
A high-Q diaphragm-structure film bulk acoustic resonator (FBAR) with a flat support diaphragm, made of Sia N4/SiO2/Sis N4 composite films,is proposed. The N/O/N composite diaphragm overcomes the wrinkling in the released support diaphragm caused by the residual stress of a single Sis N4 or SiO2 diaphragm. ZnO piezoelectric film deposited employing a DC reactive magnetron sputtering method is used as the piezoelectric material for the FBAR device. The XRD θ2θ scan indicates that the ZnO film has the preferred c-axis orientation growth,implying good piezoelectric properties.The S parameter measurement shows that there are three primary resonances in the frequency range from 0. 4 to 2.6GHz. The series resonant frequency, parallel resonant frequency, K2eff, and quality factors of the three resonances are calculated. The third one,with a frequency of about 2.4GHz,has the highest quality factor about 500. Thus,it is expected to be a candidate to form a 2. 4GHz low-phase-noise oscillator.关键词
薄膜体声波谐振器/振荡器/滤波器/复合膜/氧化锌Key words
film bulk acoustic resonator/oscillator/filter/composite diaphragm/ZnO分类
信息技术与安全科学引用本文复制引用
汤亮,李俊红,郝震宏,乔东海..射频薄膜体声波谐振器的研制和分析[J].半导体学报,2008,29(11):2226-2231,6.基金项目
国家自然科学基金资助项目(批准号:90607012) （批准号:90607012）
Project supported by the National Natural Science Foundation of China (No. 90607012) （No. 90607012）
