半导体学报2009，Vol.30Issue(5)：22-27,6.DOI:10.1088/1674-4926/30/5/053002
Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon
Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon
摘要
Abstract
In the experiment, acid leaching under an ultrasonic field (20 kHz, 80 W) was used to remove Al, Fe, and Ti impurities in metallurgical grade silicon (MG-Si). The effects of the acid leaching process parameters, including the particle size of silicon, the acid type (HCl, HNO3, HF,) and the leaching time on the purification of MG-Si were investigated. The results show that HCl leaching, an initial size of 0.1 mm for the silicon particles, and 8 h of leaching time are the optimum parameters to purify MG-Si. The acid leaching process under an ultrasonic field is more effective than the acid leaching under magnetic stirring, the mechanism of which is preliminarily discussed.关键词
purification/optimization/acid leaching/ultrasonic field/metallurgical grade siliconKey words
purification/optimization/acid leaching/ultrasonic field/metallurgical grade silicon分类
信息技术与安全科学引用本文复制引用
Zhang Jian,Li Tingju,Ma Xiaodong,Luo Dawei,Liu Ning,Liu Dehua..Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon[J].半导体学报,2009,30(5):22-27,6.基金项目
Project supported by the National Natural Science Foundation of China (No.50674018). （No.50674018）
