半导体学报2005，Vol.26Issue(12)：2271-2274,4.
一种快速推算栅极氧化膜TDDB寿命的方法
One Method for Fast Gate Oxide TDDB Lifetime Prediction
赵毅 1万星拱 2徐向明3
作者信息
- 1. 上海华虹NEC电子有限公司逻辑技术开发部,上海,201206
- 2. 东京大学材料系,东京,113-8656,日本
- 3. 上海集成电路研发中心,上海,201203
- 折叠
摘要
Abstract
A method for fast gate oxide TDDB lifetime prediction for process control monitors (PCM) is proposed.For normal TDDB lifetime prediction at operation voltage and temperature, we must getthree lifetimes at relative low stress voltages and operation temperature. Then we use these three lifetimes to project the TDDB lifetime at operation voltage and temperature via the E-model. This requires a very long time for measurement. With our new method,it can be calculated quickly by projecting the TDDB lifetime at operation voltage and temperature with measurement data at relatively high stress voltages. Our test case indicates that this method is very effective. And the result with our new method is very close to that with the normal TDDB lifetime prediction method. But the measurement time is less than 50s for one sample, less than 1/100000 of that with the normal prediction method. With this new method,we can monitor gate oxide TDDB lifetime on-line.关键词
TDDB/寿命/预测Key words
TDDB/lifetime/prediction分类
信息技术与安全科学引用本文复制引用
赵毅,万星拱,徐向明..一种快速推算栅极氧化膜TDDB寿命的方法[J].半导体学报,2005,26(12):2271-2274,4.
