半导体学报2001，Vol.11Issue(2)：228-233,6.
利用FN电流估计薄栅MOS结构栅氧化层的 势垒转变区的宽度
Estimate of Width of Transition Region of Barrier for Thin Film Insulator MOS Structure Using Fowler-Nordheim Tunneling Current
摘要
Abstract
According to the numerical solution to the Schro¨dingerequation,factor B is observed to depend strongly on the width of transition region of barrier,while factor C is almost independent of the width.An analytic expression about FN tunneling current has been obtained using the WKB approximation,as well as the barrier that includes a transition region,which can be applied to estimate the width of barrier transition region for the gate oxides of thin MOS structures.The result obtained being compared with that from the numerical solution to Schro¨dinger equation,it is found that they agree with each other very well when the width of barrier transition rigion is less than 1nm.It indicates this method may be used to estimate the width of barrier transition region.The experimental result also shows that B factor changes greatly with the temperature,which can partly prove the method.关键词
FN电流/MOS结构/栅氧化层分类
信息技术与安全科学引用本文复制引用
毛凌锋,谭长华,许铭真..利用FN电流估计薄栅MOS结构栅氧化层的 势垒转变区的宽度[J].半导体学报,2001,11(2):228-233,6.
