半导体学报2005，Vol.26Issue(12)：2290-2293,4.
一种提高垂直腔面发射激光器性能的新工艺
A New Process for Improving Performance of VCSELs
郝永芹 1钟景昌 1谢浩锐 1姜晓光 1赵英杰 1王立军2
作者信息
- 1. 长春理工大学高功率半导体激光国家重点实验室,长春,130022
- 2. 长春光学精密与物理研究所,长春,130033
- 折叠
摘要
Abstract
A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers (VCSELs). The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection, so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench,and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.关键词
外延生长/激光二极管/量子阱激光器/半导体激光器/垂直腔面发射激光器Key words
epitaxial growth/laser diode/quantum-well laser/semiconductor laser/vertical-cavity surface-emitting laser分类
信息技术与安全科学引用本文复制引用
郝永芹,钟景昌,谢浩锐,姜晓光,赵英杰,王立军..一种提高垂直腔面发射激光器性能的新工艺[J].半导体学报,2005,26(12):2290-2293,4.
