半导体学报2005，Vol.26Issue(12)：2294-2297,4.
热退火对多晶硅特性的影响
Effect of Thermal Annealing on Characteristics of Polycrystalline Silicon
任丙彦 1勾宪芳 1马丽芬 2励旭东 1许颖 2王文静2
作者信息
- 1. 河北工业大学半导体研究所,天津,300130
- 2. 北京太阳能研究所,北京,100083
- 折叠
摘要
Abstract
Oxygen and carbon behaviors and minority-carrier lifetimes in multi-crystalline silicon (mc-Si) used for solar cells are investigated by FTIR and QSSPCD before and after annealing at 750～1150C in N2 and O2 ambient.For comparison, the annealing of CZ silicon with nearly the same oxygen and carbon concentrations is also carried out under the same conditions. The results reveal that the oxygen and carbon concentrations of mc-Si and CZ-Si have a lesser decrease,which means oxygen precipitates are not generated,and grain boundaries in mc-Si do not affect carbon behavior. Bulk lifetime of mc-Si increases in N2 and O2 ambient at 850,950,and 1150C ,and the lifetime of mc-Si wafers annealed in O2 are higher than those annealed in N2, which shows that a lot of impurities in mc-Si at high temperature annealing diffuse to grain boundaries, greatly reducing recombination centers. Interstitial Si atoms filling vacancies or recombination centers increases lifetime.关键词
多晶硅/氧/寿命Key words
polycrystalline silicon/oxygen/lifetime分类
信息技术与安全科学引用本文复制引用
任丙彦,勾宪芳,马丽芬,励旭东,许颖,王文静..热退火对多晶硅特性的影响[J].半导体学报,2005,26(12):2294-2297,4.
