半导体学报（英文版）2008，Vol.29Issue(12)：2304-2306,3.
背照式ZnO紫外焦平面成像阵列制作的刻蚀研究
Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers
高群 1张景文 1侯洵1
作者信息
- 1. 西安交通大学电子科学与工程系,西安,710049
- 折叠
摘要
Abstract
Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated. The etching result of 128 × 128 array,in which the area of unit cell was 25μm v 25μm,was studied. The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time. The dependence of etching rate on NH4 Cl solution concentration was also studied. The photoresponsivity of the array's unit cells was measured. The UV-tovisible rejection ratio was around 60 : 1.关键词
刻蚀/NH4Cl/焦平面阵列Key words
etching/NH4Cl/focal plane array分类
信息技术与安全科学引用本文复制引用
高群,张景文,侯洵..背照式ZnO紫外焦平面成像阵列制作的刻蚀研究[J].半导体学报（英文版）,2008,29(12):2304-2306,3.
