半导体学报（英文版）2008，Vol.29Issue(12)：2322-2325,4.
脉冲法电沉积SnS:Ag薄膜
Preparation of SnS : Ag Thin Films by Pulse Electrodeposition
摘要
Abstract
SnS:Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase (Ag8 SnS6) with good crystallization and big grain size. The conductivity of the films was measured by photoelectrochemical test. It is proved that the SnS:Ag films are p-type of semiconductor. Hall measurement shows that the carrier concentration of the films increases, while their resistivity decreases after Ag-doping.关键词
脉冲电沉积/SnS/Ag薄膜/光电性能Key words
pulse electrodeposition/SnS: Ag thin films/electrical and optical properties分类
信息技术与安全科学引用本文复制引用
杨永丽,程树英..脉冲法电沉积SnS:Ag薄膜[J].半导体学报（英文版）,2008,29(12):2322-2325,4.基金项目
福建省科技厅(批准号:2006J0032,2006F5062,200810019)及福州大学(批准号:XRC-0736,K-081005)资助项目 Project supported by the Department of Science ＆ Technology of Fujian Province (Nos. 200810019,2006F5062,2006J0032) and the Fuzhou Universi- ty (Nos. K-081005, XRC-0736) （批准号:2006J0032,2006F5062,200810019）
