半导体学报2009，Vol.30Issue(8)：23-27,5.DOI:10.1088/1674-4926/30/8/082005
TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al2O3 and multi layers of TiN film structure
TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al2O3 and multi layers of TiN film structure
摘要
Abstract
an 1 × 10-12 A/cm2.No early failures under stress conditions are found in its TDDB test.The novel MIS capacitor is proven to have excellent reliability for advanced DRAM technology.关键词
atomic layer deposition/Al2O3/multi-layer TiN/early failure/metal insulator silicon capacitors/TDDBKey words
atomic layer deposition/Al2O3/multi-layer TiN/early failure/metal insulator silicon capacitors/TDDB分类
信息技术与安全科学引用本文复制引用
Peng Kun,Wang Biao,Xiao Deyuan,Qiu Shengfen,Lin D C,Wu Ping,Yang S F..TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al2O3 and multi layers of TiN film structure[J].半导体学报,2009,30(8):23-27,5.基金项目
Project supported by the National Natural Science Foundation of China (No. 50371033), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20040674009), and the Semiconductor Manufacturing International Corporation. （No. 50371033）
