人工晶体学报2000，Vol.29Issue(3)：234-239,6.
用MPCVD法制备氮化碳薄膜
Carbon Nitride Films Deposited by MPCVD
摘要
Abstract
Carbon nitride films have been deposited on Si and Pt substances by microwave plasma chemical vapor deposition (MPCVD). For films deposited on Si substrates, SEM observations showed that polycrystalline films were formed. The nitrogen to carbon ratio was in the range of 1.0-2.0. XRD experiments with films on both Si and Pt substrate showed that the films consisted of crystal phases of α-and β-C3N4. Detailed XPS peak profile analysis showed that the carbon and nitrogen atoms in the films were mainly bound together in single bond covalent C-N bonds. IR spectra also showed characteristic peaks of β-C3N4. Strong evidence shows that crystalline carbon nitride films have been synthesized.关键词
C3N4薄膜/微波等离子体化学气相沉积/表征/X射线衍射Key words
C3N4 film/MPCVD/characterization/X-ray diffraction分类
数理科学引用本文复制引用
顾有松,张永平,常香荣,田中卓,时东霞,张秀芳,袁磊..用MPCVD法制备氮化碳薄膜[J].人工晶体学报,2000,29(3):234-239,6.基金项目
国家自然科学基金(No.19674009) （No.19674009）
