四川师范大学学报（自然科学版）2009，Vol.32Issue(2)：235-238,4.
室温不可逆原电池技术制备BaMoO4多晶薄膜
Room Temperature Preparation of BaMoO4 Polycrystalline Thin Film by a Nonreversible Galvanic Cell Technique
摘要
Abstract
Well-crystallized BaMoO4 polycrystalline films were prepared directly on molybdenum substrate by a nonreversible galvanic cell method without applied current in barium hydroxide aqueous solution at room temperature (25 °C). The microstructures of the prepared films were characterized by using XRD, SEM and Raman spectrometer, respectively; and the formation mechanism of the films under the electrochemical conditions was discussed. The XRD, SEM and Raman measurements results indicate that the as-prepared thin films are a single phase BaMoO4 with a scheelite-type structure and show uniform and homogeneous surfaces; the formation of BaMoO4 film includes anode dissolution-oxidation reaction and solution deposition reaction in the nonreversible galvanic cell. The driving force of the nonreversible galvanic cell reaction is the difference of the electrode potential between anode and cathode of the cell.关键词
BaMoO4多晶薄膜/非可逆原电池/制备/形成机制Key words
BaMoO4 polycrystalline thin film/Nonreversible galvanic cell/Preparation/Formation mechanism分类
化学化工引用本文复制引用
徐成刚,赖欣,崔春华,毕剑,高道江..室温不可逆原电池技术制备BaMoO4多晶薄膜[J].四川师范大学学报（自然科学版）,2009,32(2):235-238,4.基金项目
国家自然科学基金(50472103)资助项目 （50472103）
Supported by the National Science Foundation of China(50472103) （50472103）
