半导体学报2005，Vol.26Issue(2)：238-242,5.
标准CMOS工艺集成肖特基二极管设计与实现
Design and Fabrication of Schottky Diode with Standard CMOS Process
摘要
Abstract
Design and fabrication of Schottky barrier diodes (SBD) with a commercial standard 0.35μm CMOS process are described.In order to reduce the series resistor of Schottky contact,interdigitating the fingers of schottky diode layout is adopted.The I-V,C-V,and S parameter are measured.The parameters of realized SBD such as the saturation current,breakdown voltage,and the Schottky barrier height are given.The SPICE simulation model of the realized SBDs is given.关键词
CMOS/肖特基二极管/集成Key words
CMOS/Schottky diode/integration分类
信息技术与安全科学引用本文复制引用
李强,王俊宇,韩益锋,闵昊..标准CMOS工艺集成肖特基二极管设计与实现[J].半导体学报,2005,26(2):238-242,5.基金项目
国家高技术研究发展计划资助项目(批准号:2003AA1Z1280) （批准号:2003AA1Z1280）
