半导体学报2008，Vol.29Issue(2)：240-243,4.
钒受主能级在n型4H-SiC中的深能级瞬态傅里叶谱和光致发光
Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC
摘要
Abstract
Deep level transient Fourier spectroscopy (DLTFS) measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation. Two acceptor levels of vanadium at Ec - 0.81 and Ec - 1.02eV with the electron capture cross section of 7. 0 × 10-16 and 6. 0 x 10-16 cm2 are observed, respectively. Low-temperature.photoluminescence measurements in the range of 1.4～3.4eV are also performed on the sample,which reveals the formation of two electron traps at 0. 80 and 1.16eV below the conduction band. These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC,with the location of 0. 8 ± 0. 01 and 1.1 ± 0.08eV below the conduction band.关键词
4H-SiC/钒掺杂/受主能级Key words
4H-SiC/vanadium doping/acceptor level分类
信息技术与安全科学引用本文复制引用
王超,张义门,张玉明,王悦湖,徐大庆..钒受主能级在n型4H-SiC中的深能级瞬态傅里叶谱和光致发光[J].半导体学报,2008,29(2):240-243,4.基金项目
Project supported by the National Natural Science Foundation of China (No.60376001),the State Key Development Program for Basic Research of China (No. 2002CB311904), the National Defense Basic Research Program of China (No. 51327020202), and the Key Program of the Ministry of Education,China(No.106150) （No.60376001）
