发光学报2001，Vol.22Issue(z1)：24-28,5.
用N2-H2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响
Effects of GaAs Substrate Nitridation with N2-H2 Plasma on c-GaN Epitaxy Growth by ECR-PEMOCVD
摘要
Abstract
The effects of nitridation conditions to GaAs (001) substrates in N2-H2 plasmas on c-GaN film grown by electron-cyclotron-resonance plasma enhanced metalorganic chemical vapor deposition (ECRPE-MOCVD) was investigated. It was found that there have remarkable effects on the growth of c-GaN film when hydrogen plasma was added during nitridation. XRD ( θ - 2θ)analysis showed that the FWHM of epitaxy film growing with hydrogen plasma during nitridation was improved exceeds 40 % compared with that of epitaxy film growing without hydrogen plasma during nitridation. Atomic force microscopy (AFM) observation showed that the surface of buffer layers becomes smoother and the crystallites become larger when nitridated in N2-H2 plasmas. We think that the uniform nucleation of GaAs (001) substrate surface is a crucial factor for getting better crystalline quality of c-GaN. Finally, a chemical model is put forward to interpret the influence of hydrogen plasma during the nitridation process.关键词
ECR-PEMOCVD/氮化/缓冲层/立方GaN/氢等离子体分类
信息技术与安全科学引用本文复制引用
王三胜,顾彪,徐茵,秦福文,隋郁,杨大智..用N2-H2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响[J].发光学报,2001,22(z1):24-28,5.基金项目
国家自然科学基金资助项目 （）
