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CVI工艺对CVI—SiC基体及C/SiC复合材料性能的影响

宋麦丽 邹武 王涛 闫联生

宇航材料工艺2001,Vol.31Issue(1):24-28,5.
宇航材料工艺2001,Vol.31Issue(1):24-28,5.

CVI工艺对CVI—SiC基体及C/SiC复合材料性能的影响

Influence of Process Technology on the Properties of CVI-SiC Matrix and Its Composites

宋麦丽 1邹武 1王涛 1闫联生1

作者信息

  • 1. 陕西非金属材料工艺研究所
  • 折叠

摘要

Abstract

High mechanical properties and anti-oxidation stability of SiC matrix composites are dependent on high performance of CVI-SiC matrix materials.Microstructure and composition of the CVI-SiC matrix materials deposited under different CVI conditions are examined by SEM and XRD.Test results show that crystal orientation of the CVI SiC materials is much dependent on reaction temperature.When it is below 1100℃ the CVI SiC materials have single crystal orientation plane(111),and double crystal orientation planes (111,220) with a small amount of orientation plane(311) when the reaction temperature is above 1100°C.The different stacking modes of SiC crystal grain directly influence the properties of the CVI SiC materials and its composites.Moreover,the properties of the CVI-SiC matrix and composites are influenced by reagent flow.In this work,the effects of the depositing temperature and reagent flow on the properties of the SiC matrix are investigated,and the optimized process is introduced.

关键词

CVI/SiC基体/SEM分析/XRD分析/微观结构

分类

航空航天

引用本文复制引用

宋麦丽,邹武,王涛,闫联生..CVI工艺对CVI—SiC基体及C/SiC复合材料性能的影响[J].宇航材料工艺,2001,31(1):24-28,5.

宇航材料工艺

OA北大核心CSCD

1007-2330

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