半导体学报2002，Vol.23Issue(3)：246-250,5.
硅单电子晶体管的制造及特性
Fabrication and Characteristics of a Si-Based Single Electron Transistor
摘要
Abstract
Si-based single electron transistor (SET) is fabricated successfully on p-type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one-dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (dIds/dVds) oscillations and the Coulomb staircases in the source-drain current (Ids) are shown clearly dependent on the source-drain voltage at 5.3K.The Ids-Vgs (gate voltage) oscillations are observed from the Ids-Vgs characteristics as a function of Vgs at different temperatures and various values of Vds.For a SET whose total capacitance is about 9.16aF,the Ids-Vgs oscillations can be observed at 77K.关键词
单电子晶体管/库仑阻塞/单电子隧穿/量子点/电子束光刻技术Key words
single electron transistor/Coulomb blockade/single electron tunneling/quantum dot/electron beam lithography分类
信息技术与安全科学引用本文复制引用
卢刚,陈治明,王建农,葛惟昆..硅单电子晶体管的制造及特性[J].半导体学报,2002,23(3):246-250,5.基金项目
香港研究资助委员会资助项目(编号:HKUST6086/97E) （编号:HKUST6086/97E）
