半导体学报2005，Vol.26Issue(2)：250-253,4.
用高反射率型半导体可饱和吸收镜实现半导体端面泵浦Yb∶YAB激光器被动锁模
Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror
王勇刚 1马骁宇 2薛迎红 1孙虹 2张志刚 2王清月2
作者信息
- 1. 中国科学院半导体研究所,北京,100083
- 2. 天津大学精密仪器与光电子工程学院,超快激光实验室,天津,300072
- 折叠
摘要
Abstract
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3.05ps at 1.044μm.The pulse frequency is 375MHz;the output power is 45mW.关键词
Yb∶YAB/高反射率/半导体饱和吸收镜Key words
Yd∶YAB/high reflectivity/SESAM分类
信息技术与安全科学引用本文复制引用
王勇刚,马骁宇,薛迎红,孙虹,张志刚,王清月..用高反射率型半导体可饱和吸收镜实现半导体端面泵浦Yb∶YAB激光器被动锁模[J].半导体学报,2005,26(2):250-253,4.
