半导体学报2003，Vol.24Issue(3)：250-254,5.
用于CMOS图像传感器的双极结型光栅晶体管特性的数值模拟与分析
Numerical Simulation and Analysis of Bipolar Junction Photogate Transistor for CMOS Image Sensor
金湘亮 1陈杰 1仇玉林1
作者信息
- 1. 中国科学院微电子中心,北京,100029
- 折叠
摘要
Abstract
A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.关键词
双极结型光栅晶体管/光电检测器/CMOS图像传感器Key words
bipolar junction photogate transistor/photodetector/CMOS image sensor分类
信息技术与安全科学引用本文复制引用
金湘亮,陈杰,仇玉林..用于CMOS图像传感器的双极结型光栅晶体管特性的数值模拟与分析[J].半导体学报,2003,24(3):250-254,5.
