半导体学报2001，Vol.22Issue(3)：251-255,5.
采用高真空／快速热处理／化学气相淀积外延SiGe HBT结构
Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal
Processing／Chemical Vapor Deposition
摘要
Abstract
The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition (HV/RTP/CVD) system.Device-quality material is grown by handling process after careful design. The Ge fraction varies up to 0.25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n-Si/i-p+-i SiGe/n-Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.关键词
化学气相淀积/SiGe/HBT分类
信息技术与安全科学引用本文复制引用
贾宏勇,林惠旺,陈培毅,钱佩信..采用高真空／快速热处理／化学气相淀积外延SiGe HBT结构[J].半导体学报,2001,22(3):251-255,5.
