半导体学报2001，Vol.22Issue(1)：25-30,6.
关态应力下P-MOSFETs的退化
Degradation of P-MOSFETs Under Off-State Stress
摘要
Abstract
The hot carrier effects under off-state stress mode (Vgs=0,Vds＜0) have been investigated on 9nm P-MOSFETs with channel length varying from 1.025μm to 0.525μm.Both on-and off-state currents are discussed.It is found that the off-state leakage current decreases after a higher voltage stressing,which is induced by the charge injection occurred close to the drain junction.However,the leakage current increases after a lower voltage stressing because of the newly generated interface traps.It is also found that the on state saturation current and threshold voltage degrade significantly with the stress time,which we believe is due to the charges injected near the gate-drain overlapping region and/or the stress-induced interface trap generation.The degradation of Idsat can be expressed as a function of the product of the gate current (Ig) and the number of charges injected into the gate oxide (Qinj)in a simple power law.Finally,a lifetime prediction model based on the degradation of Idsat is proposed.关键词
关态应力/栅感应漏电(GIDL)/HCI/界面陷阱分类
信息技术与安全科学引用本文复制引用
杨存宇,王子欧,谭长华,许铭真..关态应力下P-MOSFETs的退化[J].半导体学报,2001,22(1):25-30,6.
