半导体学报2005，Vol.26Issue(2)：258-265,8.
镜像法分析静电感应晶体管特性
Analysis on Characteristic of Static Induction Transistor Using Mirror Method
胡冬青 1李思渊 1王永顺1
作者信息
- 1. 兰州大学物理科学与技术学院,静电感应器件研究所,兰州,730000
- 折叠
摘要
Abstract
A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinched-off factor;gate efficiency η decreases as the gate dimension α2 and shifted gate voltage are minished,and what differs from the first-order theory is that η will tend to zero at the shifted gate voltage tends to zero when VD=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT's characteristic suited to both triode-like and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.关键词
静电感应晶体管/镜像法/I-V特性Key words
static induction transistor/mirror method/I-V characteristic分类
信息技术与安全科学引用本文复制引用
胡冬青,李思渊,王永顺..镜像法分析静电感应晶体管特性[J].半导体学报,2005,26(2):258-265,8.
