半导体学报2006，Vol.27Issue(2)：258-265,8.
降低泄漏电流的细粒度休眠晶体管插入法
Fine-Grain Sleep Transistor Insertion for Leakage Reduction
摘要
Abstract
A fine-grain sleep transistor insertion technique based on our simplified leakage current and delay models is proposed to reduce leakage current. The key idea is to model the leakage current reduction problem as a mixed-integer linear programming (MLP) problem in order to simultaneously place and size the sleep transistors optimally. Because of better circuit slack utilization, our experimental results show that the MLP model can save leakage by 79.75%, 93.56%, and 94.99% when the circuit slowdown is 0%, 3%, and 5%, respectively. The MLP model also achieves on average 74.79% less area penalty compared to the conventional fixed slowdown method when the circuit slowdown is 7%.关键词
泄漏电流/细粒度/休眠晶体管/延时模型/混和整数线性规划Key words
leakage current reduction/fine-grain/sleep transistor insertion/delay model/mixed-integer linear programming分类
信息技术与安全科学引用本文复制引用
杨华中,汪玉,林海,罗嵘,汪蕙..降低泄漏电流的细粒度休眠晶体管插入法[J].半导体学报,2006,27(2):258-265,8.基金项目
国家高技术研究发展计划(批准号:2004AA1Z1050,2005AA1Z1230)和国家自然科学基金(批准号:90207001,60506010)资助项目 （批准号:2004AA1Z1050,2005AA1Z1230）
