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Fabrication of solenoid-type microinductor with different magnetic core schemes by MEMS technique

Gao Xiaoyu Zhou Yong Chen Ji'an Lei Chong Zhao Xiaolin

高技术通讯(英文版)2006,Vol.12Issue(3):260-262,3.
高技术通讯(英文版)2006,Vol.12Issue(3):260-262,3.

Fabrication of solenoid-type microinductor with different magnetic core schemes by MEMS technique

Fabrication of solenoid-type microinductor with different magnetic core schemes by MEMS technique

Gao Xiaoyu 1Zhou Yong 1Chen Ji'an 1Lei Chong 1Zhao Xiaolin1

作者信息

  • 1. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Institute of Micro and Nano Science and Technology,Shanghai Jiaotong University, Shanghai 200030, P.R. China
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摘要

Abstract

Two micromachined solenoid-type inductors with different electroplated core structures, ellipse and rectangle, were fabricated, tested and compared in order to reach optimum designs for integrated inductors and transformers. In the process of fabrication, UV-LIGA, dry etching technique, fine polishing and electroplating techniques have been adopted to achieve high performance microinductor. Experimental results show that both types of the inductors are characterized by high inductance, Q-factor and low electrical resistance. While the inductance of the inductor with rectangular magnetic core is slightly higher than that with elliptical magnetic core, the quality factor of the latter is larger than that of the former.

关键词

microelectromechanical system (MEMS)/inductance/quality factor (Q-factor)/microinductor/magnetic core

Key words

microelectromechanical system (MEMS)/inductance/quality factor (Q-factor)/microinductor/magnetic core

分类

信息技术与安全科学

引用本文复制引用

Gao Xiaoyu,Zhou Yong,Chen Ji'an,Lei Chong,Zhao Xiaolin..Fabrication of solenoid-type microinductor with different magnetic core schemes by MEMS technique[J].高技术通讯(英文版),2006,12(3):260-262,3.

基金项目

Supported by High Technology Research and Development Program (No. 2004AA302042), the Nanotechnology Program of Shanghai Science & Technology Committee (No.0352nm014), the National Natural Science Foundation of China (No. 50275096), Samsung Advanced Institute of Technology (SALT), Samsung Electronics Co., Ltd., and Shanghai-Applied Materials Research and Development Fund (No.0515). (No. 2004AA302042)

高技术通讯(英文版)

OAEI

1006-6748

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