人工晶体学报2007，Vol.36Issue(2)：263-266,259,5.
InP同质外延的不稳定生长:小丘的形成
Unstable Growth in InP Homoepitaxy:Mound Formation
摘要
Abstract
The mound formation during molecular beam epitaxy of InP with variations of growth temperatures and Ⅴ/Ⅲ beam equivalent pressure (BEP) ratios is studied by means of atomic force microscopy. Three-dimensional (3D) mounds are observed in two kinds of growth conditions. One is at low growth temperature, the origin of mound formation can be attributed to an intrinsic growth instability of a singular surface in the presence of so-called Ehrlich-Schwoebel (ES) step-edge barrier, which inhibit the downward movement of adatoms at surface step-edges. The other is at high temperature, or at low Ⅴ/Ⅲ (BEP) ratio, the reason of mound formation is related to phosphorus deficiency. Under suitable growth conditions, two-dimensional (2D) layer-by-layer growth can be obtained.关键词
固态源分子束外延/原子力显微镜/InP/表面形貌Key words
SSMBE/AFM/InP/surface morphology分类
信息技术与安全科学引用本文复制引用
皮彪,李丹,王占国,孙甲明,林耀望,姚江宏,邢晓东,蔡莹,舒强,贾国治,刘如彬..InP同质外延的不稳定生长:小丘的形成[J].人工晶体学报,2007,36(2):263-266,259,5.基金项目
This work is financially supported by Applied Basic Study Foundation of Tianjin (No.06YFJZJC01100) and the National Natural Science Foundation of China (60476042) （No.06YFJZJC01100）
