人工晶体学报2000，Vol.29Issue(3)：264-268,5.
平面SiC薄膜场致发射的机理研究
Mechanism of Field Electron Emission from a Planar SiC Film
摘要
Abstract
Besides the general advantages as diamond films in FEE, SiC film is able to be n-type doped or p-type doped easily. The SiC films have been developed as cold cathodes by APCVD. It is found in the FEE tests that the onset field strength is as low as 0.3 MV/m. According to the theoretical analysis about the emission procedure an exponential increase model is deduced to understand the FEE results. According to the model, the electron injection from substrate to the film plays an important role in the FEE, and the electron transport in the film is vital for the FEE. So the distance between the two adjacent conductive centers can be estimated of 0.6 nm.关键词
SiC薄膜/多晶/场致发射/I～V特性/拟合Key words
SiC film/poly-crystalline/field electron emission (FEE)/I-V characterization/modeling分类
数理科学引用本文复制引用
李德昌,杨银堂,刘广均,朱长纯..平面SiC薄膜场致发射的机理研究[J].人工晶体学报,2000,29(3):264-268,5.基金项目
国家自然科学基金(No.69776023) （No.69776023）
教育部博士点基金资助项目(No.98069828) （No.98069828）
