半导体学报2005，Vol.26Issue(2)：266-270,5.
硅衬底注氮方法制备超薄SiO2栅介质
Fabrication of Ultrathin SiO2 Gate Dielectric by Direct Nitrogen Implantation into Silicon Substrate
摘要
Abstract
Nitrogen implantation in silicon substrate at fixed energy of 35keV and split dose of 1014～5×1014cm-2 is performed before gate oxidation.The experiment results indicate that with the increasing of implantation dose of nitrogen,oxidation rate of gate decreases.The retardation in oxide growth is weakened due to thermal annealing after nitrogen implantation.After nitrogen is implanted at the dose of 2×1014cm-2,initial O2 injection method which is composed of an O2 injection/N2 annealing/main oxidation,is applied for preparation of 3.4nm gate oxide.Compared with the control process,which is composed of N2 annealing/main oxidation,initial O2 injection process suppresses leakage current of the gate oxide.But Qbd and HF C-V characteristics are almost identical for the samples fabricated by two different oxidation processes.关键词
超薄栅介质/氮离子注入/击穿特性Key words
ultrathin gate dielectric/nitrogen implantation/breakdown分类
信息技术与安全科学引用本文复制引用
许晓燕,程行之,黄如,张兴..硅衬底注氮方法制备超薄SiO2栅介质[J].半导体学报,2005,26(2):266-270,5.基金项目
国家自然科学基金(批准号:90207004)及国家重点基础研究专项基金(批准号:20000365)资助项目 （批准号:90207004）
