物理学报2001，Vol.50Issue(2)：268-272,5.
包含键环境修正的硅氢紧束缚势模型
TIGHT-BINDING POTENTIAL WITH CORRECTION OF BONDING ENVIRONMENT FOR SILICON-HYDROGEN
摘要
Abstract
We have developed a new Si-H tight-binding potential through introducing hydrogen atom into the previous silicon tight-binding potential model,in which the correction of environment around a Si-H bond is considered for the interaction between silicon and hydrogen.The testing results show good transferability,hence this new model can be used to do research on complicated silicon-hydrogen systems.关键词
紧束缚势模型/半导体,缺陷分类
数理科学引用本文复制引用
潘必才..包含键环境修正的硅氢紧束缚势模型[J].物理学报,2001,50(2):268-272,5.基金项目
教育部留学基金、中国科学院留学基金、中国科学院基金和国家自然科学基金(批准号：69876035)资助的课题. （批准号：69876035）
