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High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers

半导体学报2006，Vol.27Issue(2)：270-275,6.

High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers

作者信息

1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA;Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA;Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA;NASA-Glenn Research Center, Cleveland, OH 44135, USA;NASA-Glenn Research Center, Cleveland, OH 44135, USA
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摘要

Abstract

Limited by increased parasitics and thermal effects as device size increases, current commercial SiGe power HBTs are difficult to operate at X-band (8～ 12GHz) frequencies with adequate power added efficiencies at high power levels. We find that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with a proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, thus permitting these devices to be efficiently operated at X-band frequencies. In this paper,we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8～10GHz. At 10GHz,a 22.5dBm (178mW) RF output power with a concurrent gain of 7.32dB is measured at the peak power-added efficiency of 20.0%, and a maximum RF output power of 24.0dBm (250mW) is achieved from a 20 emitter finger SiGe power HBT. The demonstration of a single-stage X-band medium-power linear MMIC power amplifier is also realized at 8GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7dB,a maximum output power of 23.4dBm,and peak power added efficiency of 16% are achieved from the power amplifier. The MMIC exhibits very low distortion with 3rd order intermodulation (IM) suppression C/I of -13dBc at an output power of 21.2dBm and over 20dBm 3rd order output intercept point (OIP3).

关键词

common-base/common-emitter/doping profile/load-pull/MMIC/SiGe heterojunction bipolar transistors

Key words

common-base/common-emitter/doping profile/load-pull/MMIC/SiGe heterojunction bipolar transistors

分类

信息技术与安全科学

引用本文复制引用

..High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers[J].半导体学报,2006,27(2):270-275,6.

基金项目

Project supported by the NSF (No. ECS 0323717) （No. ECS 0323717）

半导体学报

OA北大核心CSCDCSTPCD

ISSN：1674-4926

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